Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
TDSON
Serija
OptiMOS™ 3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Plotis
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.35mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 19,00
€ 0,95 Each (In a Pack of 20) (be PVM)
€ 22,99
€ 1,15 Each (In a Pack of 20) (su PVM)
Standartas
20

€ 19,00
€ 0,95 Each (In a Pack of 20) (be PVM)
€ 22,99
€ 1,15 Each (In a Pack of 20) (su PVM)
Standartas
20

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
20 - 80 | € 0,95 | € 19,00 |
100 - 180 | € 0,743 | € 14,86 |
200 - 480 | € 0,714 | € 14,29 |
500 - 980 | € 0,686 | € 13,72 |
1000+ | € 0,599 | € 11,99 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
TDSON
Serija
OptiMOS™ 3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Plotis
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.35mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.