Infineon OptiMOS™ N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 BSB104N08NP3GXUSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
80 V
Serija
OptiMOS™
Pakuotės tipas
MG-WDSON-2
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
0.0104 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
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€ 2 090,00
€ 0,418 Each (On a Reel of 5000) (be PVM)
€ 2 528,90
€ 0,506 Each (On a Reel of 5000) (su PVM)
5000
€ 2 090,00
€ 0,418 Each (On a Reel of 5000) (be PVM)
€ 2 528,90
€ 0,506 Each (On a Reel of 5000) (su PVM)
5000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
80 V
Serija
OptiMOS™
Pakuotės tipas
MG-WDSON-2
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
0.0104 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products