Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343
Techniniai dokumentai
Specifikacijos
Markė
InfineonTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
4.1 V
Pakuotės tipas
SOT-343
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
4.8 V
Maximum Emitter Base Voltage
0.5 V
Maximum Operating Frequency
45 GHz
Kaiščių skaičius
4
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
2 x 1.25 x 0.9mm
Produkto aprašymas
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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€ 13,96
€ 0,559 Each (In a Pack of 25) (be PVM)
€ 16,89
€ 0,676 Each (In a Pack of 25) (su PVM)
Standartas
25
€ 13,96
€ 0,559 Each (In a Pack of 25) (be PVM)
€ 16,89
€ 0,676 Each (In a Pack of 25) (su PVM)
Standartas
25
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 25 - 225 | € 0,559 | € 13,96 |
| 250 - 600 | € 0,42 | € 10,50 |
| 625 - 1225 | € 0,392 | € 9,81 |
| 1250 - 2475 | € 0,363 | € 9,07 |
| 2500+ | € 0,335 | € 8,38 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
4.1 V
Pakuotės tipas
SOT-343
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
4.8 V
Maximum Emitter Base Voltage
0.5 V
Maximum Operating Frequency
45 GHz
Kaiščių skaičius
4
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
2 x 1.25 x 0.9mm
Produkto aprašymas
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products