Diodes Inc P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 DMP21D6UFD-7
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Pakuotės tipas
X1-DFN1212
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Ilgis
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
1.25mm
Aukštis
0.48mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 11,97
€ 0,06 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 14,48
€ 0,073 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200
€ 11,97
€ 0,06 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 14,48
€ 0,073 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 200 - 400 | € 0,06 | € 5,98 |
| 500 - 900 | € 0,048 | € 4,84 |
| 1000 - 1900 | € 0,043 | € 4,28 |
| 2000+ | € 0,041 | € 4,08 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Pakuotės tipas
X1-DFN1212
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Ilgis
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
1.25mm
Aukštis
0.48mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products