MOSFETs

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Išsami informacija Markė Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
N/P-Ch 1206-8 ChipFET 20V 40/100mohm @
  • RS kodas 180-7304
  • Gamintojas Vishay
  • Gamintojo kodas SI5515CDC-T1-GE3
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N-CHANNEL 20-V (D-S) MOSFET Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
SIRC06DP-T1-GE3 Dual N-Channel MOSFET, 60 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix Vishay Siliconix N 60 A 30 V 4 mΩ 1V 2.1V -16 V, +20 V SO-8 Surface Mount 8 Single Enhancement Power MOSFET 50 W 2455 pF @ 15 V 38.5 nC @ 10 V 5.99 x 5 x 1.07mm 23 ns TrenchFET 29 ns 120s 5mm 1.07mm 5.99mm 0.7V - +150 °C 2 -55 °C Si -
Si7172ADP-T1-RE3 N-Channel MOSFET, 17.2 A, 200 V TrenchFET, 8-Pin SO-8 Vishay Siliconix Vishay Siliconix N 17.2 A 200 V 80 mΩ 4V 2V ±20 V SO-8 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1110 pF @ 100 V 19.5 nC @ 10 V 5.99 x 5 x 1.07mm 15 ns TrenchFET 11 ns 26s 5mm 1.07mm 5.99mm 1.1V - +150 °C 1 -55 °C Si -
SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix Vishay Siliconix N 12 A 100 V 70 mΩ 4V 2V ±20 V SC-70 Surface Mount 6 Single Enhancement Power MOSFET 19 W 550 pF @ 50 V 8.5 nC @ 10 V 2.2 x 1.35 x 1mm 14 ns TrenchFET 11 ns 25s 1.35mm 1mm 2.2mm 1.2V - +150 °C 1 -55 °C Si -
SiAA00DJ-T1-GE3 N-Channel MOSFET, 40 A, 25 V TrenchFET, 6-Pin SC-70 Vishay Siliconix Vishay Siliconix N 40 A 25 V 7 mΩ 2.5V 1V -12 V, +16 V SC-70 Surface Mount 6 Single Enhancement Power MOSFET 19.2 W 1090 pF @ 12.5 V 15.7 nC @ 10 V 2.2 x 1.35 x 1mm 16 ns TrenchFET 10 ns 66s 1.35mm 1mm 2.2mm 1.2V - +150 °C 1 -55 °C Si -
SiRA10BDP-T1-GE3 N-Channel MOSFET, 60 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix Vishay Siliconix N 60 A 30 V 5 mΩ 1.2V 2.4V -16 V, +20 V SO-8 Surface Mount 8 Single Enhancement Power MOSFET 43 W 1710 pF @ 15 V 24.1 nC @ 10 V 5.99 x 5 x 1.07mm 30 ns TrenchFET 17 ns 68s 5mm 1.07mm 5.99mm 1.1V - +150 °C 1 -55 °C Si -
SiRA12BDP-T1-GE3 N-Channel MOSFET, 60 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix Vishay Siliconix N 60 A 30 V 6 mΩ 1.2V 2.4V -16 V, +20 V SO-8 Surface Mount 8 Single Enhancement Power MOSFET 38 W 1470 pF @ 15 V 21 nC @ 10 V 5.99 x 5 x 1.07mm 15 ns TrenchFET 16 ns 67s 5mm 1.07mm 5.99mm 1.1V - +150 °C 1 -55 °C Si -
SiSH129DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix P 35 A 30 V 20 mΩ 2.8V 1.5V ±20 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 52.1 W 2230 pF @ -15 V 47.5 nC @ 10 V 3.15 x 3.15 x 1.07mm 36 ns TrenchFET 50 ns 37s 3.15mm 1.07mm 3.15mm 1.2V - +150 °C 1 -50 °C Si -
SiSH402DN-T1-GE3 N-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix N 35 A 30 V 8 mΩ 1.15V 2.2V ±20 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1700 pF @ 15 V 28 nC @ 10 V 3.15 x 3.15 x 1.07mm 25 ns TrenchFET 25 ns 82s 3.15mm 1.07mm 3.15mm 1.2V - +150 °C 1 -55 °C Si -
SiSH617DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix P 35 A 30 V 20 mΩ 2.5V 1.2V ±25 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1800 pF @ -15 V 39 nC @ 10 V 3.15 x 3.15 x 1.07mm 32 ns TrenchFET 40 ns 35s 3.15mm 1.07mm 3.15mm 1.2V - +150 °C 1 -55 °C Si -
SIZF916DT-T1-GE3 Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 (Channel 2) V, 30 (Channnel 1) V Vishay Siliconix N 40 (Channnel 1) A, 60 (Channel 2) A 30 (Channel 2) V, 30 (Channnel 1) V 6 mΩ 1.1V 2.4V +16 (Channel 2) V, +20 (Channnel 1) V, -12 (Channel 2) V, -16 (Channnel 1) V PowerPAIR 6 x 5 Surface Mount 8 - Enhancement Power MOSFET 26.6 (Channnel 1) W, 60 (Channel 2) W 1060 (Channel 1) pF @ 15 V, 4320 (Channel 2) pF @ 15 V 14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V 5 x 6 x 0.7mm 20 (Channel 1) ns, 45 (Channel) ns TrenchFET 17 (Channel 1) ns, 30 (Channel) ns - 6mm 0.7mm 5mm 1.2V - +150 °C 2 -55 °C Si -
SISC06DN-T1-GE3 Dual N-Channel MOSFET, 40 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix N 40 A 30 V 4 mΩ 1V 2.1V -16 V, +20 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 46.3 W 2455 pF @ 15 V 38.5 nC @ 10 V 3.15 x 3.15 x 1.07mm 23 ns TrenchFET 29 ns 120s 3.15mm 1.07mm 3.15mm 0.7V - +150 °C 2 -55 °C Si -
SiS110DN-T1-GE3 N-Channel MOSFET, 14.2 A, 100 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix N 14.2 A 100 V 70 mΩ 2V 4V ±20 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 24 W 550 pF @ 50 V 8.5 nC @ 10 V 3.15 x 3.15 x 1.07mm 14 ns TrenchFET 10 ns 25s 3.15mm 1.07mm 3.15mm 1.2V - +150 °C 1 -55 °C Si -
P-Ch MOSFET SOT-23 30V 40mohm @ 4.5V Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
P-Ch MOSFET TSOP-6 Copper 30V 19.2mohm @ Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Si2319DDS-T1-GE3 P-Channel MOSFET, 3.6 A, 40 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix Vishay Siliconix P 3.6 A 40 V 100 mΩ 2.5V 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.7 W 650 pF @ -20 V 12.5 nC @ 10 V 3.04 x 1.4 x 1.02mm 20 ns TrenchFET 30 ns 10s 1.4mm 1.02mm 3.04mm 1.2V - +150 °C 1 -55 °C Si -
4.5V P-Ch 60V (D-S) MPSFET - Lead(Pb) a Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
AEQC101 Qualified P-CHANNEL 20-V (D-S) 1 Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Dual N-Ch MOSFET SC-89-6 20V 396 mohms @ Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
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