N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SIS468DN-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Serija
ThunderFET
Pakuotės tipas
PowerPAK 1212-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.4mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Plotis
3.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.12mm
Produkto aprašymas
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 6,41
€ 1,282 Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 7,76
€ 1,551 Už kiekviena vnt. (tiekiama juostoje) (su PVM)
Standartas
5
€ 6,41
€ 1,282 Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 7,76
€ 1,551 Už kiekviena vnt. (tiekiama juostoje) (su PVM)
Standartas
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Juosta |
|---|---|---|
| 5 - 45 | € 1,282 | € 6,41 |
| 50 - 245 | € 1,14 | € 5,70 |
| 250 - 495 | € 1,092 | € 5,46 |
| 500 - 1245 | € 0,831 | € 4,16 |
| 1250+ | € 0,743 | € 3,71 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Serija
ThunderFET
Pakuotės tipas
PowerPAK 1212-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.4mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Plotis
3.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.12mm
Produkto aprašymas
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products