N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Serija
EF Series
Pakuotės tipas
TO-247AC
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Plotis
5.31mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
20.82mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 6,56
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 7,94
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
€ 6,56
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 7,94
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 6,56 |
| 10 - 24 | € 6,08 |
| 25 - 49 | € 5,51 |
| 50 - 99 | € 5,22 |
| 100+ | € 4,84 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Serija
EF Series
Pakuotės tipas
TO-247AC
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Plotis
5.31mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
20.82mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products