P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Plotis
4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0,639
Each (In a Pack of 20) (be PVM)
€ 0,773
Each (In a Pack of 20) (su PVM)
Standartas
20
€ 0,639
Each (In a Pack of 20) (be PVM)
€ 0,773
Each (In a Pack of 20) (su PVM)
Standartas
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 20 - 80 | € 0,639 | € 12,79 |
| 100 - 180 | € 0,512 | € 10,24 |
| 200 - 480 | € 0,486 | € 9,73 |
| 500 - 980 | € 0,461 | € 9,22 |
| 1000+ | € 0,435 | € 8,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Plotis
4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products