N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB Vishay IRFZ14PBF

RS kodas: 541-1685Gamintojas: VishayGamintojo kodas: IRFZ14PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.41mm

Plotis

4.7mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Produkto aprašymas

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,09

už 1 vnt. (be PVM)

€ 1,32

už 1 vnt. (su PVM)

N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB Vishay IRFZ14PBF
Pasirinkite pakuotės tipą
sticker-462

€ 1,09

už 1 vnt. (be PVM)

€ 1,32

už 1 vnt. (su PVM)

N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB Vishay IRFZ14PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 9€ 1,09
10 - 49€ 0,95
50 - 99€ 0,89
100 - 249€ 0,82
250+€ 0,75

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.41mm

Plotis

4.7mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Produkto aprašymas

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more