N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
650 V
Serija
DTMOSIV
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
6.1mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
6.6mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Aukštis
2.3mm
Forward Diode Voltage
1.7V
Kilmės šalis
Japan
Produkto aprašymas
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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€ 6,43
€ 0,643 Each (In a Pack of 10) (be PVM)
€ 7,78
€ 0,778 Each (In a Pack of 10) (su PVM)
10
€ 6,43
€ 0,643 Each (In a Pack of 10) (be PVM)
€ 7,78
€ 0,778 Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,643 | € 6,43 |
| 50 - 90 | € 0,577 | € 5,77 |
| 100 - 490 | € 0,56 | € 5,60 |
| 500 - 990 | € 0,537 | € 5,37 |
| 1000+ | € 0,522 | € 5,22 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
650 V
Serija
DTMOSIV
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
6.1mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
6.6mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Aukštis
2.3mm
Forward Diode Voltage
1.7V
Kilmės šalis
Japan
Produkto aprašymas
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products