N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W5,S1VF(S

RS kodas: 125-0585Gamintojas: ToshibaGamintojo kodas: TK62N60W5,S1VF(S
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

61.8 A

Maximum Drain Source Voltage

600 V

Serija

DTMOSIV

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

5.02mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

15.94mm

Typical Gate Charge @ Vgs

205 nC @ 10 V

Aukštis

20.95mm

Forward Diode Voltage

1.7V

Produkto aprašymas

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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€ 11,88

už 1 vnt. (be PVM)

€ 14,37

už 1 vnt. (su PVM)

N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W5,S1VF(S
sticker-462

€ 11,88

už 1 vnt. (be PVM)

€ 14,37

už 1 vnt. (su PVM)

N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W5,S1VF(S
Sandėlio informacija laikinai nepasiekiama.
sticker-462

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kiekisVieneto kaina
1 - 4€ 11,88
5 - 9€ 10,64
10+€ 9,78

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

61.8 A

Maximum Drain Source Voltage

600 V

Serija

DTMOSIV

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

5.02mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

15.94mm

Typical Gate Charge @ Vgs

205 nC @ 10 V

Aukštis

20.95mm

Forward Diode Voltage

1.7V

Produkto aprašymas

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more