N-Channel MOSFET, 112 A, 120 V, 3-Pin TO-220 Toshiba TK56E12N1,S1X(S
Techniniai dokumentai
Specifikacijos
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Kaiščių skaičius
3
Maximum Gate Source Voltage
-20 V, +20 V
Forward Diode Voltage
1.2V
Tvirtinimo tipas
Through Hole
Minimum Gate Threshold Voltage
2V
Maksimali darbinė temperatūra
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
120 V
Serija
U-MOSVIII-H
Plotis
4.45mm
Pakuotės tipas
TO-220
Ilgis
10.16mm
Maximum Power Dissipation
168 W
Aukštis
15.1mm
Maximum Continuous Drain Current
112 A
Maximum Drain Source Resistance
7 mΩ
Markė
ToshibaTypical Gate Charge @ Vgs
69 nC @ 10 V
Produkto aprašymas
11mm, 3.5 Digit Display
LCD 4 to 20mA Current Loop Powered Meters
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,784
Each (In a Pack of 10) (be PVM)
€ 0,949
Each (In a Pack of 10) (su PVM)
10
€ 0,784
Each (In a Pack of 10) (be PVM)
€ 0,949
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,784 | € 7,84 |
| 50 - 90 | € 0,705 | € 7,05 |
| 100+ | € 0,656 | € 6,56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Kaiščių skaičius
3
Maximum Gate Source Voltage
-20 V, +20 V
Forward Diode Voltage
1.2V
Tvirtinimo tipas
Through Hole
Minimum Gate Threshold Voltage
2V
Maksimali darbinė temperatūra
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
120 V
Serija
U-MOSVIII-H
Plotis
4.45mm
Pakuotės tipas
TO-220
Ilgis
10.16mm
Maximum Power Dissipation
168 W
Aukštis
15.1mm
Maximum Continuous Drain Current
112 A
Maximum Drain Source Resistance
7 mΩ
Markė
ToshibaTypical Gate Charge @ Vgs
69 nC @ 10 V
Produkto aprašymas
11mm, 3.5 Digit Display
LCD 4 to 20mA Current Loop Powered Meters
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products