N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220
Serija
DTMOSIV
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Plotis
4.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Aukštis
15.1mm
Kilmės šalis
Japan
Produkto aprašymas
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 7,41
€ 3,705 Each (In a Pack of 2) (be PVM)
€ 8,97
€ 4,483 Each (In a Pack of 2) (su PVM)
2
€ 7,41
€ 3,705 Each (In a Pack of 2) (be PVM)
€ 8,97
€ 4,483 Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 3,705 | € 7,41 |
| 10 - 18 | € 2,708 | € 5,42 |
| 20 - 48 | € 2,66 | € 5,32 |
| 50 - 98 | € 2,565 | € 5,13 |
| 100+ | € 2,518 | € 5,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220
Serija
DTMOSIV
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Plotis
4.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Aukštis
15.1mm
Kilmės šalis
Japan
Produkto aprašymas
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products