N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R

RS kodas: 171-2402Gamintojas: ToshibaGamintojo kodas: SSM3K339R
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Plotis

1.8mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Aukštis

0.7mm

Forward Diode Voltage

1.2V

Kilmės šalis

Thailand

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€ 0,089

Each (On a Reel of 3000) (be PVM)

€ 0,108

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R
sticker-462

€ 0,089

Each (On a Reel of 3000) (be PVM)

€ 0,108

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 Toshiba SSM3K339R
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,089€ 267,90
6000 - 6000€ 0,086€ 256,50
9000+€ 0,081€ 242,25

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Plotis

1.8mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Aukštis

0.7mm

Forward Diode Voltage

1.2V

Kilmės šalis

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more