N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T

RS kodas: 823-9243PGamintojas: Texas InstrumentsGamintojo kodas: CSD17483F4T
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

0.64mm

Typical Gate Charge @ Vgs

1.01 nC @ 4.5 V

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.04mm

Aukštis

0.35mm

Serija

FemtoFET

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,34

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,411

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T
Pasirinkite pakuotės tipą
sticker-462

€ 0,34

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,411

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 1.5 A, 30 V, 3-Pin PICOSTAR Texas Instruments CSD17483F4T
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
20 - 20€ 0,34€ 6,80
40 - 80€ 0,218€ 4,37
100 - 480€ 0,12€ 2,39
500 - 980€ 0,105€ 2,11
1000+€ 0,092€ 1,84

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

0.64mm

Typical Gate Charge @ Vgs

1.01 nC @ 4.5 V

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.04mm

Aukštis

0.35mm

Serija

FemtoFET

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more