N-Channel MOSFET, 100 A, 30 V, 8-Pin SON Texas Instruments CSD17303Q5

RS kodas: 827-4820Gamintojas: Texas InstrumentsGamintojo kodas: CSD17303Q5
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V

Plotis

5.1mm

Transistor Material

Si

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.05mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 2,09

Each (In a Pack of 5) (be PVM)

€ 2,529

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 100 A, 30 V, 8-Pin SON Texas Instruments CSD17303Q5
Pasirinkite pakuotės tipą
sticker-462

€ 2,09

Each (In a Pack of 5) (be PVM)

€ 2,529

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 100 A, 30 V, 8-Pin SON Texas Instruments CSD17303Q5
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 2,09€ 10,45
50 - 95€ 1,662€ 8,31
100+€ 1,33€ 6,65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V

Plotis

5.1mm

Transistor Material

Si

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.05mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more