N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

RS kodas: 171-3620Gamintojas: Taiwan SemiconductorGamintojo kodas: TSM3N80CH C5G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

800 V

Pakuotės tipas

TO-251

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

4.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

2.3mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Aukštis

7mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 2,232

Each (On a Reel of 1875) (be PVM)

€ 2,701

Each (On a Reel of 1875) (su PVM)

N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

1875

Galima įsigyti kartotiną kiekį 1875
1875€ 4 185,94
3750€ 8 371,88
5625€ 12 557,81
7500€ 16 743,75
9375€ 20 929,69
11250€ 25 115,62
13125€ 29 301,56
15000€ 33 487,50
16875€ 37 673,44
18750€ 41 859,38
20625€ 46 045,31
22500€ 50 231,25
24375€ 54 417,19
26250€ 58 603,12
28125€ 62 789,06
sticker-462

€ 2,232

Each (On a Reel of 1875) (be PVM)

€ 2,701

Each (On a Reel of 1875) (su PVM)

N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G
Sandėlio informacija laikinai nepasiekiama.

1875

Galima įsigyti kartotiną kiekį 1875
1875€ 4 185,94
3750€ 8 371,88
5625€ 12 557,81
7500€ 16 743,75
9375€ 20 929,69
11250€ 25 115,62
13125€ 29 301,56
15000€ 33 487,50
16875€ 37 673,44
18750€ 41 859,38
20625€ 46 045,31
22500€ 50 231,25
24375€ 54 417,19
26250€ 58 603,12
28125€ 62 789,06
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

800 V

Pakuotės tipas

TO-251

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

4.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

2.3mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Aukštis

7mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more