SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STMicroelectronics STWA67N60M6
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-247
Serija
ST
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.045 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
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€ 5,415
Each (In a Tube of 30) (be PVM)
€ 6,552
Each (In a Tube of 30) (su PVM)
30
€ 5,415
Each (In a Tube of 30) (be PVM)
€ 6,552
Each (In a Tube of 30) (su PVM)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-247
Serija
ST
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.045 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products