N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STMicroelectronics STW56N60DM2
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-247
Serija
MDmesh DM2
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Plotis
5.15mm
Number of Elements per Chip
1
Aukštis
20.15mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.6V
Kilmės šalis
China
Produkto aprašymas
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
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€ 273,60
€ 9,12 Each (In a Tube of 30) (be PVM)
€ 331,06
€ 11,035 Each (In a Tube of 30) (su PVM)
30
€ 273,60
€ 9,12 Each (In a Tube of 30) (be PVM)
€ 331,06
€ 11,035 Each (In a Tube of 30) (su PVM)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-247
Serija
MDmesh DM2
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Plotis
5.15mm
Number of Elements per Chip
1
Aukštis
20.15mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.6V
Kilmės šalis
China
Produkto aprašymas
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products