Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M2
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.75mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Plotis
5.15mm
Minimali darbinė temperatūra
-55 °C
Aukštis
20.15mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 14,01
€ 2,802 Each (In a Pack of 5) (be PVM)
€ 16,95
€ 3,391 Each (In a Pack of 5) (su PVM)
Standartas
5
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
€ 14,01
€ 2,802 Each (In a Pack of 5) (be PVM)
€ 16,95
€ 3,391 Each (In a Pack of 5) (su PVM)
Standartas
5
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 20 | € 2,802 | € 14,01 |
25 - 45 | € 2,66 | € 13,30 |
50 - 120 | € 2,422 | € 12,11 |
125 - 245 | € 2,185 | € 10,92 |
250+ | € 2,042 | € 10,21 |
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M2
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.75mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Plotis
5.15mm
Minimali darbinė temperatūra
-55 °C
Aukštis
20.15mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).