N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

RS kodas: 192-4952Gamintojas: STMicroelectronicsGamintojo kodas: STP26N65DM2
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

25 A

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Plotis

4.6mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.4mm

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Aukštis

15.75mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.6V

Kilmės šalis

China

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€ 4,095

Each (In a Pack of 5) (be PVM)

€ 4,955

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2
Pasirinkite pakuotės tipą
sticker-462

€ 4,095

Each (In a Pack of 5) (be PVM)

€ 4,955

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 4,095€ 20,48
25 - 45€ 3,832€ 19,16
50 - 120€ 3,622€ 18,11
125 - 245€ 3,412€ 17,06
250+€ 3,255€ 16,28

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

25 A

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Plotis

4.6mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.4mm

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Aukštis

15.75mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.6V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more