Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Serija
STripFET F7
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Aukštis
0.95mm
Forward Diode Voltage
1.2V
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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Patikrinkite dar kartą.
€ 0,818
Each (On a Reel of 3000) (be PVM)
€ 0,99
Each (On a Reel of 3000) (su PVM)
3000
€ 0,818
Each (On a Reel of 3000) (be PVM)
€ 0,99
Each (On a Reel of 3000) (su PVM)
3000
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Serija
STripFET F7
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Aukštis
0.95mm
Forward Diode Voltage
1.2V
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.