Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.75 x 5.15 x 20.15mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.75 x 5.15 x 20.15mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.