Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M2
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.4mm
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Aukštis
4.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 11,16
€ 2,232 Each (In a Pack of 5) (be PVM)
€ 13,50
€ 2,701 Each (In a Pack of 5) (su PVM)
Standartas
5
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
€ 11,16
€ 2,232 Each (In a Pack of 5) (be PVM)
€ 13,50
€ 2,701 Each (In a Pack of 5) (su PVM)
Standartas
5
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 20 | € 2,232 | € 11,16 |
25 - 45 | € 2,138 | € 10,69 |
50 - 120 | € 1,90 | € 9,50 |
125 - 245 | € 1,71 | € 8,55 |
250+ | € 1,662 | € 8,31 |
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M2
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.4mm
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Aukštis
4.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).