STMicroelectronics BUT100 NPN Bipolar Transistor, 125 V, 3-Pin TO-3
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsTransistor Type
NPN
Maximum Collector Emitter Voltage
125 V
Pakuotės tipas
TO-3
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
300 W
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+200 °C
Matmenys
8.7 x 39.5 x 26.2mm
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P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
JOIN FOR FREE
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Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsTransistor Type
NPN
Maximum Collector Emitter Voltage
125 V
Pakuotės tipas
TO-3
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
300 W
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+200 °C
Matmenys
8.7 x 39.5 x 26.2mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products