Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
260 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS3
Configuration
Dual Half Bridge
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 237,50
už 1 vnt. (be PVM)
€ 287,38
už 1 vnt. (su PVM)
1
€ 237,50
už 1 vnt. (be PVM)
€ 287,38
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 237,50 |
2 - 4 | € 209,00 |
5 - 9 | € 190,00 |
10 - 19 | € 178,60 |
20+ | € 167,20 |
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
260 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS3
Configuration
Dual Half Bridge
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
106.4 x 61.4 x 30mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.