Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS2
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
5
Transistor Configuration
Single
Matmenys
94 x 34 x 30.1mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 103,55
už 1 vnt. (be PVM)
€ 125,30
už 1 vnt. (su PVM)
1
€ 103,55
už 1 vnt. (be PVM)
€ 125,30
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 9 | € 103,55 |
10 - 19 | € 77,42 |
20+ | € 73,15 |
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS2
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
5
Transistor Configuration
Single
Matmenys
94 x 34 x 30.1mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.