onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount
Techniniai dokumentai
Specifikacijos
Channel Type
N
Transistor Configuration
Dual
Maximum Gate Emitter Voltage
±20V
Minimali darbinė temperatūra
-40 °C
Configuration
Dual
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
22
Maksimali darbinė temperatūra
+150 °C
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
186 W
Pakuotės tipas
Q0BOOST
Batteries
3 x AAA BatteryMatmenys
66.2 x 32.8 x 11.9mm
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€ 80,75
Už kiekviena vnt. (tiekiama ant padeklo) (be PVM)
€ 97,708
Už kiekviena vnt. (tiekiama ant padeklo) (su PVM)
24
€ 80,75
Už kiekviena vnt. (tiekiama ant padeklo) (be PVM)
€ 97,708
Už kiekviena vnt. (tiekiama ant padeklo) (su PVM)
24
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Channel Type
N
Transistor Configuration
Dual
Maximum Gate Emitter Voltage
±20V
Minimali darbinė temperatūra
-40 °C
Configuration
Dual
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
22
Maksimali darbinė temperatūra
+150 °C
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
186 W
Pakuotės tipas
Q0BOOST
Batteries
3 x AAA BatteryMatmenys
66.2 x 32.8 x 11.9mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products