onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G

RS kodas: 172-3371Gamintojas: onsemiGamintojo kodas: NVMFD5C470NLT1G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

40 V

Serija

NVMFD5C470NL

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

17.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Plotis

5.1mm

Ilgis

6.1mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

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€ 27,50

€ 1,10 Each (In a Pack of 25) (be PVM)

€ 33,28

€ 1,331 Each (In a Pack of 25) (su PVM)

onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G
Pasirinkite pakuotės tipą
sticker-462

€ 27,50

€ 1,10 Each (In a Pack of 25) (be PVM)

€ 33,28

€ 1,331 Each (In a Pack of 25) (su PVM)

onsemi NVMFD5C470NL Dual N-Channel MOSFET, 36 A, 40 V, 8-Pin DFN NVMFD5C470NLT1G

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Pakuotė
25 - 75€ 1,10€ 27,50
100 - 225€ 0,936€ 23,40
250+€ 0,811€ 20,28

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

40 V

Serija

NVMFD5C470NL

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

17.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Plotis

5.1mm

Ilgis

6.1mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more