N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG

RS kodas: 195-2524Gamintojas: onsemiGamintojo kodas: NTMYS7D3N04CLTWG
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

4.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Aukštis

1.15mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,908

Each (On a Reel of 3000) (be PVM)

€ 1,099

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 2 724,60
6000€ 5 449,20
9000€ 8 173,80
12000€ 10 898,40
15000€ 13 623,00
18000€ 16 347,60
21000€ 19 072,20
24000€ 21 796,80
27000€ 24 521,40
30000€ 27 246,00
33000€ 29 970,60
36000€ 32 695,20
39000€ 35 419,80
42000€ 38 144,40
45000€ 40 869,00
sticker-462

€ 0,908

Each (On a Reel of 3000) (be PVM)

€ 1,099

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 2 724,60
6000€ 5 449,20
9000€ 8 173,80
12000€ 10 898,40
15000€ 13 623,00
18000€ 16 347,60
21000€ 19 072,20
24000€ 21 796,80
27000€ 24 521,40
30000€ 27 246,00
33000€ 29 970,60
36000€ 32 695,20
39000€ 35 419,80
42000€ 38 144,40
45000€ 40 869,00
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

4.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Aukštis

1.15mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more