N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 onsemi NTHL110N65S3F

RS kodas: 178-4256Gamintojas: onsemiGamintojo kodas: NTHL110N65S3F
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

4.82mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

15.87mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Aukštis

20.82mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

China

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€ 6,195

Each (In a Tube of 30) (be PVM)

€ 7,496

Each (In a Tube of 30) (su PVM)

N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 onsemi NTHL110N65S3F
sticker-462

€ 6,195

Each (In a Tube of 30) (be PVM)

€ 7,496

Each (In a Tube of 30) (su PVM)

N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 onsemi NTHL110N65S3F
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
30 - 90€ 6,195€ 185,85
120 - 240€ 5,46€ 163,80
270 - 480€ 5,25€ 157,50
510 - 990€ 5,145€ 154,35
1020+€ 4,988€ 149,62

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

4.82mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

15.87mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Aukštis

20.82mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more