onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3F

RS kodas: 178-4255Gamintojas: onsemiGamintojo kodas: NTHL065N65S3F
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

337 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Plotis

4.82mm

Ilgis

15.87mm

Typical Gate Charge @ Vgs

98 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Aukštis

20.82mm

Kilmės šalis

China

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€ 165,00

€ 5,50 Each (In a Tube of 30) (be PVM)

€ 199,65

€ 6,655 Each (In a Tube of 30) (su PVM)

onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3F
sticker-462

€ 165,00

€ 5,50 Each (In a Tube of 30) (be PVM)

€ 199,65

€ 6,655 Each (In a Tube of 30) (su PVM)

onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3F

Sandėlio informacija laikinai nepasiekiama.

sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

337 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Plotis

4.82mm

Ilgis

15.87mm

Typical Gate Charge @ Vgs

98 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Aukštis

20.82mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina