P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G

RS kodas: 780-0517Gamintojas: onsemiGamintojo kodas: NTD2955-1G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Plotis

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

6.35mm

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 8,98

€ 0,898 Each (In a Pack of 10) (be PVM)

€ 10,87

€ 1,087 Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G
Pasirinkite pakuotės tipą
sticker-462

€ 8,98

€ 0,898 Each (In a Pack of 10) (be PVM)

€ 10,87

€ 1,087 Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
10 - 90€ 0,898€ 8,98
100 - 240€ 0,873€ 8,73
250 - 990€ 0,847€ 8,47
1000+€ 0,828€ 8,28

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Plotis

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

6.35mm

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more