Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.6 x 4.7 x 20.6mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 6,08
Each (In a Tube of 30) (be PVM)
€ 7,357
Each (In a Tube of 30) (su PVM)
30
€ 6,08
Each (In a Tube of 30) (be PVM)
€ 7,357
Each (In a Tube of 30) (su PVM)
30
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.6 x 4.7 x 20.6mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.