onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

RS kodas: 146-2047Gamintojas: onsemiGamintojo kodas: FGH60N60SMD-F085
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

600 W

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Channel Type

N

Kaiščių skaičius

3

Transistor Configuration

Single

Matmenys

15.6 x 4.7 x 20.6mm

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Automotive IGBT, Fairchild Semiconductor

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 6,08

Each (In a Tube of 30) (be PVM)

€ 7,357

Each (In a Tube of 30) (su PVM)

onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
sticker-462

€ 6,08

Each (In a Tube of 30) (be PVM)

€ 7,357

Each (In a Tube of 30) (su PVM)

onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

600 W

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Channel Type

N

Kaiščių skaičius

3

Transistor Configuration

Single

Matmenys

15.6 x 4.7 x 20.6mm

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Automotive IGBT, Fairchild Semiconductor

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more