Dual N/P-Channel-Channel MOSFET, 6.5 A, 9 A, 40 V, 5-Pin DPAK onsemi FDD8424H
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
6.5 A, 9 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Serija
PowerTrench
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
5
Maximum Drain Source Resistance
24 mΩ, 54 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
14 nC @ 10 V, 17 nC @ 10 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Aukštis
2.39mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 57,00
€ 1,14 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 68,97
€ 1,379 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50
€ 57,00
€ 1,14 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 68,97
€ 1,379 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 50 - 95 | € 1,14 | € 5,70 |
| 100 - 495 | € 0,998 | € 4,99 |
| 500 - 995 | € 0,874 | € 4,37 |
| 1000+ | € 0,796 | € 3,98 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
6.5 A, 9 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Serija
PowerTrench
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
5
Maximum Drain Source Resistance
24 mΩ, 54 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
14 nC @ 10 V, 17 nC @ 10 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Aukštis
2.39mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products