N-Channel MOSFET, 20 A, 600 V, 3-Pin D2PAK onsemi FCB20N60TM
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Serija
SuperFET
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
75 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
4.83mm
Produkto aprašymas
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 5,42
už 1 vnt. (be PVM)
€ 6,56
už 1 vnt. (su PVM)
Standartas
1
€ 5,42
už 1 vnt. (be PVM)
€ 6,56
už 1 vnt. (su PVM)
Standartas
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 24 | € 5,42 |
| 25 - 99 | € 3,14 |
| 100 - 249 | € 3,04 |
| 250 - 499 | € 2,94 |
| 500+ | € 2,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Serija
SuperFET
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
75 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
4.83mm
Produkto aprašymas
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products