Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-92
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.19mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
5.2mm
Aukštis
5.33mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Patikrinkite dar kartą.
€ 0,145
Each (On a Reel of 10000) (be PVM)
€ 0,175
Each (On a Reel of 10000) (su PVM)
10000
€ 0,145
Each (On a Reel of 10000) (be PVM)
€ 0,175
Each (On a Reel of 10000) (su PVM)
10000
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-92
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.19mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
5.2mm
Aukštis
5.33mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.