onsemi FGH40T100SMD IGBT, 80 A 1000 V, 3-Pin TO-247, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1000 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
333 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
15.87 x 4.82 x 20.82mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 4,845
Each (In a Pack of 2) (be PVM)
€ 5,862
Each (In a Pack of 2) (su PVM)
Standartas
2
€ 4,845
Each (In a Pack of 2) (be PVM)
€ 5,862
Each (In a Pack of 2) (su PVM)
Standartas
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 4,845 | € 9,69 |
| 10 - 98 | € 4,132 | € 8,26 |
| 100 - 248 | € 3,278 | € 6,56 |
| 250 - 498 | € 3,135 | € 6,27 |
| 500+ | € 2,945 | € 5,89 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1000 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
333 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
15.87 x 4.82 x 20.82mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products