Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1000 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
63 W
Pakuotės tipas
TO-3P
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
15.8 x 5 x 20.1mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,205
Each (In a Tube of 30) (be PVM)
€ 2,668
Each (In a Tube of 30) (su PVM)
30
€ 2,205
Each (In a Tube of 30) (be PVM)
€ 2,668
Each (In a Tube of 30) (su PVM)
30
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1000 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
63 W
Pakuotės tipas
TO-3P
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
15.8 x 5 x 20.1mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.