N-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB NXP BUK9575-100A,127

RS kodas: 484-2915Gamintojas: NXPGamintojo kodas: BUK9575-100A,127
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

NXP

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.3mm

Plotis

4.7mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

9.4mm

Produkto aprašymas

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 0,932

Each (In a Pack of 5) (be PVM)

€ 1,128

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB NXP BUK9575-100A,127
sticker-462

€ 0,932

Each (In a Pack of 5) (be PVM)

€ 1,128

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB NXP BUK9575-100A,127
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 5€ 0,932€ 4,66
10 - 20€ 0,844€ 4,22
25 - 45€ 0,824€ 4,12
50 - 95€ 0,793€ 3,97
100+€ 0,645€ 3,23

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

NXP

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.3mm

Plotis

4.7mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

9.4mm

Produkto aprašymas

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina