Littelfuse MG06400D-BN4MM Series IGBT Module, 460 A 600 V, 7-Pin 62MM Module, Panel Mount
Techniniai dokumentai
Specifikacijos
Markė
LittelfuseMaximum Continuous Collector Current
460 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1400 W
Pakuotės tipas
62MM Module
Configuration
Series
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Switching Speed
1MHz
Transistor Configuration
Series
Matmenys
108 x 62 x 30.5mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
China
Produkto aprašymas
IGBT Modules, Littelfuse
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 114,00
už 1 vnt. (be PVM)
€ 137,94
už 1 vnt. (su PVM)
Standartas
1
€ 114,00
už 1 vnt. (be PVM)
€ 137,94
už 1 vnt. (su PVM)
Standartas
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
LittelfuseMaximum Continuous Collector Current
460 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1400 W
Pakuotės tipas
62MM Module
Configuration
Series
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Switching Speed
1MHz
Transistor Configuration
Series
Matmenys
108 x 62 x 30.5mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
China
Produkto aprašymas
IGBT Modules, Littelfuse
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products