N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

RS kodas: 146-4403Gamintojas: IXYSGamintojo kodas: IXFA80N25X3
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Kaiščių skaičius

3

Minimali darbinė temperatūra

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

1.4V

Tvirtinimo tipas

Surface Mount

Minimum Gate Threshold Voltage

2.5V

Maksimali darbinė temperatūra

+150 °C

Maximum Gate Threshold Voltage

4.5V

Maximum Drain Source Voltage

250 V

Maximum Gate Source Voltage

±20 V

Serija

HiperFET

Aukštis

4.83mm

Ilgis

10.41mm

Plotis

11.05mm

Maximum Continuous Drain Current

80 A

Maximum Power Dissipation

390 W

Markė

IXYS

Maximum Drain Source Resistance

16 mΩ

Pakuotės tipas

D2PAK (TO-263)

Typical Gate Charge @ Vgs

83 @ 10 V nC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 9,69

už 1 vnt. (be PVM)

€ 11,72

už 1 vnt. (su PVM)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

€ 9,69

už 1 vnt. (be PVM)

€ 11,72

už 1 vnt. (su PVM)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3
Sandėlio informacija laikinai nepasiekiama.

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 4€ 9,69
5 - 9€ 8,26
10 - 24€ 7,88
25+€ 7,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Kaiščių skaičius

3

Minimali darbinė temperatūra

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

1.4V

Tvirtinimo tipas

Surface Mount

Minimum Gate Threshold Voltage

2.5V

Maksimali darbinė temperatūra

+150 °C

Maximum Gate Threshold Voltage

4.5V

Maximum Drain Source Voltage

250 V

Maximum Gate Source Voltage

±20 V

Serija

HiperFET

Aukštis

4.83mm

Ilgis

10.41mm

Plotis

11.05mm

Maximum Continuous Drain Current

80 A

Maximum Power Dissipation

390 W

Markė

IXYS

Maximum Drain Source Resistance

16 mΩ

Pakuotės tipas

D2PAK (TO-263)

Typical Gate Charge @ Vgs

83 @ 10 V nC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more