P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1

RS kodas: 826-9074Gamintojas: InfineonGamintojo kodas: SPD09P06PLG
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

60 V

Serija

SIPMOS®

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.41mm

Produkto aprašymas

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Patikrinkite dar kartą.

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€ 36,24

€ 0,725 Each (In a Pack of 50) (be PVM)

€ 43,85

€ 0,877 Each (In a Pack of 50) (su PVM)

P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 50.

Gamyba -

Galima įsigyti kartotiną kiekį 50.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

50

Galima įsigyti kartotiną kiekį 50
50€ 36,24
100€ 72,48
150€ 108,73
200€ 144,97
250€ 116,14
300€ 139,36
350€ 162,59
400€ 185,82
450€ 209,05
500€ 232,28
550€ 255,50
600€ 278,73
650€ 301,96
700€ 325,18
750€ 348,41
sticker-462

€ 36,24

€ 0,725 Each (In a Pack of 50) (be PVM)

€ 43,85

€ 0,877 Each (In a Pack of 50) (su PVM)

P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 50.

Gamyba -

Galima įsigyti kartotiną kiekį 50.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

50

Galima įsigyti kartotiną kiekį 50
50€ 36,24
100€ 72,48
150€ 108,73
200€ 144,97
250€ 116,14
300€ 139,36
350€ 162,59
400€ 185,82
450€ 209,05
500€ 232,28
550€ 255,50
600€ 278,73
650€ 301,96
700€ 325,18
750€ 348,41
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
50 - 200€ 0,725€ 36,24
250 - 950€ 0,465€ 23,23
1000 - 2450€ 0,37€ 18,48
2500+€ 0,322€ 16,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

60 V

Serija

SIPMOS®

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.41mm

Produkto aprašymas

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more