P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF

RS kodas: 725-9252Gamintojas: InfineonGamintojo kodas: IRF9335PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.7 nC @ 4.5 V, 9.1 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

4.98mm

Plotis

3.99mm

Transistor Material

Si

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.57mm

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Galbūt jus domina
Infineon HEXFET P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC IRF9335TRPBF
€ 0,567Each (In a Pack of 25) (be PVM)

€ 4,71

€ 0,471 Each (In a Pack of 10) (be PVM)

€ 5,70

€ 0,57 Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF
Pasirinkite pakuotės tipą
sticker-462

€ 4,71

€ 0,471 Each (In a Pack of 10) (be PVM)

€ 5,70

€ 0,57 Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBF

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Pakuotė
10 - 90€ 0,471€ 4,71
100 - 190€ 0,323€ 3,23
200+€ 0,307€ 3,07

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Infineon HEXFET P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC IRF9335TRPBF
€ 0,567Each (In a Pack of 25) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.7 nC @ 4.5 V, 9.1 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

4.98mm

Plotis

3.99mm

Transistor Material

Si

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.57mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Infineon HEXFET P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC IRF9335TRPBF
€ 0,567Each (In a Pack of 25) (be PVM)