Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Plotis
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Aukštis
0.75mm
Serija
OptiMOS
Produkto aprašymas
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,958
Each (In a Pack of 20) (be PVM)
€ 1,159
Each (In a Pack of 20) (su PVM)
20
€ 0,958
Each (In a Pack of 20) (be PVM)
€ 1,159
Each (In a Pack of 20) (su PVM)
20
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
20 - 180 | € 0,958 | € 19,15 |
200+ | € 0,732 | € 14,64 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Plotis
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Aukštis
0.75mm
Serija
OptiMOS
Produkto aprašymas
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.