Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
6.22mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Aukštis
2.41mm
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
0.9V
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,766
Each (In a Pack of 25) (be PVM)
€ 0,927
Each (In a Pack of 25) (su PVM)
25
€ 0,766
Each (In a Pack of 25) (be PVM)
€ 0,927
Each (In a Pack of 25) (su PVM)
25
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
25 - 100 | € 0,766 | € 19,16 |
125 - 225 | € 0,729 | € 18,22 |
250 - 600 | € 0,698 | € 17,46 |
625 - 1225 | € 0,652 | € 16,30 |
1250+ | € 0,614 | € 15,36 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
6.22mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Aukštis
2.41mm
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
0.9V
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.