Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PG-TO263-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 0,95
Each (On a Reel of 800) (be PVM)
€ 1,15
Each (On a Reel of 800) (su PVM)
800
€ 0,95
Each (On a Reel of 800) (be PVM)
€ 1,15
Each (On a Reel of 800) (su PVM)
800
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PG-TO263-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products