N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220 FP Infineon IPA90R340C3XKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
900 V
Serija
CoolMOS™ C3
Pakuotės tipas
TO-220 FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Plotis
4.85mm
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.65mm
Typical Gate Charge @ Vgs
94 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.15mm
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 2,47
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 2,989
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
4
€ 2,47
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 2,989
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
4
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
900 V
Serija
CoolMOS™ C3
Pakuotės tipas
TO-220 FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Plotis
4.85mm
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.65mm
Typical Gate Charge @ Vgs
94 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.15mm
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products