N-Channel MOSFET, 20 A, 700 V, 3-Pin TO-220FP Infineon IPA65R190E6XKSA1

RS kodas: 857-8615Gamintojas: InfineonGamintojo kodas: IPA65R190E6XKSA1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

700 V

Serija

CoolMOS E6

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.65mm

Typical Gate Charge @ Vgs

73 nC @ 10 V

Plotis

4.85mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

16.15mm

Produkto aprašymas

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 997,50

€ 1,995 Each (In a Tube of 500) (be PVM)

€ 1 206,98

€ 2,414 Each (In a Tube of 500) (su PVM)

N-Channel MOSFET, 20 A, 700 V, 3-Pin TO-220FP Infineon IPA65R190E6XKSA1
sticker-462

€ 997,50

€ 1,995 Each (In a Tube of 500) (be PVM)

€ 1 206,98

€ 2,414 Each (In a Tube of 500) (su PVM)

N-Channel MOSFET, 20 A, 700 V, 3-Pin TO-220FP Infineon IPA65R190E6XKSA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

700 V

Serija

CoolMOS E6

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.65mm

Typical Gate Charge @ Vgs

73 nC @ 10 V

Plotis

4.85mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

16.15mm

Produkto aprašymas

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more