Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
250 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
2500pF
Maksimali darbinė temperatūra
+175 °C
Energy Rating
0.46mJ
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 3,658
Each (In a Pack of 4) (be PVM)
€ 4,426
Each (In a Pack of 4) (su PVM)
Standartas
4
€ 3,658
Each (In a Pack of 4) (be PVM)
€ 4,426
Each (In a Pack of 4) (su PVM)
Standartas
4
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
4 - 16 | € 3,658 | € 14,63 |
20 - 36 | € 3,278 | € 13,11 |
40 - 96 | € 3,088 | € 12,35 |
100 - 196 | € 2,85 | € 11,40 |
200+ | € 2,66 | € 10,64 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
250 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
2500pF
Maksimali darbinė temperatūra
+175 °C
Energy Rating
0.46mJ
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.